HH Group - Chip Gallery

Chip52 

1024-channel optical phased array transceiver at 1550 nm (2017)

Technology:
180nm CMOS SOI

Researchers:
SungWon Chung, Hooman Abediasl, Hossein Hashemi

Chip51 

26 GHz, 39 GHz, 37 GHz optimally-frequency-scaled differential cross-coupled LC oscillators (2017)

Technology:
130nm SiGe HBT BiCMOS

Researchers:
Alireza Imani, Hossein Hashemi

Chip50 

148 GHz differential Colpitts oscillator (2017)

Technology:
130nm SiGe HBT BiCMOS

Researchers:
Alireza Imani, Hossein Hashemi

Chip49 

106 GHz differential Colpitts oscillator (2017)

Technology:
130nm SiGe HBT BiCMOS

Researchers:
Alireza Imani, Hossein Hashemi

Chip48 

34-GHz two-transistor-stacked power amplifier with waveform engineering, Psat = 25 dBm, PAEsat = 26% (2017)

Technology:
130nm SiGe HBT BiCMOS

Researchers:
Kunal Datta, Hossein Hashemi

Chip47 

128-bit sub-picosecond optical pulse spectral processor at 1550 nm (2016)

Technology:
180nm CMOS SOI

Researchers:
Hooman Abediasl, Hossein Hashemi

Chip46 

Wideband mm-wave phase shifters based on constant-impedance tunable transmission lines (2016)

Technology:
45nm CMOS SOI

Researchers:
Pingyue Song, Hossein Hashemi

Chip45 

W-band three-transistor-stacked Class-E power amplifier with Psat = 23 dBm, PAEsat = 17% (2016)

Technology:
90nm SiGe HBT BiCMOS

Researchers:
Kunal Datta, Hossein Hashemi

Chip44 

W-band two-transistor-stacked Class-E power amplifier with Psat = 22 dBm, PAEsat = 19% (2016)

Technology:
90nm SiGe HBT BiCMOS

Researchers:
Kunal Datta, Hossein Hashemi

Chip43 

W-band Class-E power amplifier with Psat = 19 dBm, PAEsat = 16% (2016)

Technology:
90nm SiGe HBT BiCMOS

Researchers:
Kunal Datta, Hossein Hashemi

Chip42 

200 MSPS input-waveform-dependent reconfigurable analog-to-digital-converter (2016)

Technology:
65nm CMOS

Researchers:
Sushil Subramanian, Hossein Hashemi

Chip41 

Passive coupled-switched-capacitor-resonator-based, 0.5-1.1 GHz, reconfigurable bandpass filter (2016)

Technology:
65nm CMOS

Researchers:
Run Chen, Hossein Hashemi

Chip40 

8x8-channel optical phased array transceiver at 1550 nm (2015)

Technology:
180nm CMOS SOI

Researchers:
Hooman Abediasl, Hossein Hashemi

Chip39 

Event-driven implantable neural recording integrated system using level-crossing detectors (2015)

Technology:
130nm CMOS

Researchers:
Zahra Safarian, Hossein Hashemi

Chip38 

mm-Wave distributed injection locked frequency divider (2015)

Technology:
130nm SiGe HBT BiCMOS

Researchers:
Alireza Imani, Hossein Hashemi

Chip37 

Reconfigurable receiver with radio-frequency current-mode complex signal processing supporting carrier aggregation (2015)

Technology:
65nm CMOS

Researchers:
Run Chen, Hossein Hashemi

Chip36 

45 GHz digital power amplifier with dynamic load modulation, Psat = 29 dBm, PAEsat = 18.5% (2015)

Technology:
130nm SiGe HBT BiCMOS

Researchers:
Kunal Datta, Hossein Hashemi

Chip35 

Q-band Class-E 1-bit power modulator (2014)

Technology:
130nm SiGe HBT BiCMOS

Researchers:
Kunal Datta, Hossein Hashemi

Chip34 

Dual-carrier aggregation receiver with reconfigurable radio frequency front-end signal conditioning (2014)

Technology:
65nm CMOS

Researchers:
Run Chen, Hossein Hashemi

Chip33 

50 MHz-6 GHz, 2x2 MIMO, reconfigurable architecture, software-defined radio transceiver (2014)

Technology:
65nm CMOS

Researchers:
Behnam Analui, Ankush Goel, Timothy Mercer, Sam Mandegaran, Hossein Hashemi

Chip32 

Digital power amplifier with BW-3dB = 0.5-6 GHz, Psat = 25.6 dBm (2014)

Technology:
65nm CMOS

Researchers:
Hongrui Wang, Hossein Hashemi

Chip31 

Ultra-wideband impulse-radio radar transceiver (2013)

Technology:
130nm CMOS

Researchers:
Chenliang Du, Hossein Hashemi

Chip30 

800 MSPS quadrature digital direct frequency synthesizer and integrated nonlinear digital-to-analog-filter with less than 15 ns instantaneous frequency hopping time (2013)

Technology:
130nm CMOS

Researchers:
Sushil Subramanian, Hossein Hashemi

Chip29 

Q-band three-transistor-stacked Class-E power amplifier with Psat = 22 dBm and PAEpeak = 21% (2013)

Technology:
130nm SiGe HBT BiCMOS

Researchers:
Kunal Datta, Hossein Hashemi

Chip28 

Q-band two-transistor-stacked Class-E power amplifier with Psat = 23 dBm and PAEpeak = 35% (2013)

Technology:
130nm SiGe HBT BiCMOS

Researchers:
Kunal Datta, Hossein Hashemi

Chip27 

0.5-3 GHz software-defined radio receiver using discrete-time signal processing (2013)

Technology:
65nm CMOS

Researchers:
Run Chen, Hossein Hashemi

Chip26 

Q-band 2-Wilkinson-combined Class-E power amplifier with Psat = 22 dBm and PAEpeak = 23% (2012)

Technology:
130nm SiGe HBT BiCMOS

Researchers:
Kunal Datta, Hossein Hashemi

Chip25 

Q-band Class-E power amplifier with Psat = 20 dBm and PAEpeak = 31% (2012)

Technology:
130nm SiGe HBT BiCMOS

Researchers:
Kunal Datta, Hossein Hashemi

Chip24 

Film-bulk-acoustic-resonator Colpitts oscillator (2012)

Technology:
130nm CMOS

Researchers:
Alireza Imani, Hossein Hashemi

Chip23 

Passive sub-harmonic generation using LC oscillators (2012)

Technology:
130nm CMOS

Researchers:
Zahra Safarian, Hossein Hashemi

Chip22 

Wirelessly-powered passive radiofrequency transponder with dynamic energy storage and sensitivity enhancement (2011)

Technology:
130nm CMOS

Researchers:
Zahra Safarian, Hossein Hashemi

Chip21 

100 Hz-6 GHz software-defined receiver (2012)

Technology:
130nm CMOS

Researchers:
Ankush Goel, Behnam Analui, Hossein Hashemi

Chip20 

Short-range ultra-wideband impulse-radio sensor for human feature detection (2011)

Technology:
130nm CMOS

Researchers:
Ta-Shun Chu, Jonathan Roderick, Sanghyun Chang, Timothy Mercer, Chenliang Du, Hossein Hashemi

Chip19 

4-channel, 4-beam, 24-26 GHz, spatio-temporal RAKE radar transceiver (2010)

Technology:
90nm CMOS

Researchers:
Harish Krishnaswamy, Hossein Hashemi

Chip18 

Ultra-wideband, 30-40 GHz, 6-channel, true-time-delay-based beam-former with 7 simultaneous beams (2010)

Technology:
130nm SiGe HBT BiCMOS

Researchers:
Ta-Shun Chu, Hossein Hashemi

Chip17 

Low-power (<10 mW) Ka-Band (31-33.5 GHz) receiver front-end (2009)

Technology:
130nm SiGe HBT BiCMOS

Researchers:
Firooz Aflatouni, Hossein Hashemi

Chip16 

Wideband (10 Gbps) low power (1.8 mW) trans-impedance amplifier (2009)

Technology:
130nm CMOS

Researchers:
Firooz Aflatouni, Hossein Hashemi

Chip15 

Low-noise amplifier with BW-3dB = 0.5-5.5 GHz and noise figure = 1.35-1.85 dB (2009)

Technology:
130nm SiGe HBT BiCMOS

Researchers:
Ankush Goel, Hossein Hashemi

Chip14 

Power amplifier with BW-3dB = 0.75-3.75 GHz and Psat = 21 dBm (2009)

Technology:
130nm CMOS

Researchers:
Jonathan Roderick, Hossein Hashemi

Chip13 

Concurrent dual-frequency coupled oscillators (2008)

Technology:
180nm SiGe HBT BiCMOS

Researchers:
Ankush Goel, Hossein Hashemi

Chip12 

Concurrent dual-band oscillator and phase-locked loop (2008)

Technology:
180nm SiGe HBT BiCMOS

Researchers:
Ankush Goel, Hossein Hashemi

Chip11 

1.3-6 GHz triple-mode voltage-controlled oscillator using coupled inductors (2008)

Technology:
130nm CMOS

Researchers:
Zahra Safarian, Hossein Hashemi

Chip10 

Ultra-wideband, 1-18 GHz, 2x2 channel, true-time-delay-based beam-former with 7x7 simultaneous beams (2008)

Technology:
130nm CMOS

Researchers:
Ta-Shun Chu, Hossein Hashemi

Chip9 

Regenerative frequency divider with synchronous fractional outputs (2007)

Technology:
130nm CMOS

Researchers:
Omeed Momeni, Kaushik Sengupta, Hossein Hashemi

Chip8 

Differential X/Ku-Band (7-15 GHz) low noise amplifier (2007)

Technology:
130nm CMOS

Researchers:
Masashi Yamagata, Hossein Hashemi

Chip7 

Heterodyne phase locked loop with GHz acquisition range for coherent locking of semiconductor lasers (2007)

Technology:
130nm CMOS

Researchers:
Firooz Aflatouni, Omeed Momeni, Hossein Hashemi

Chip6 

4-Channel 24-27 GHz ultra-wideband phased array transmitter based on a variable phase ring oscillator and phase-locked loop architecture (2007)

Technology:
130nm CMOS

Researchers:
Harish Krishnaswamy, Hossein Hashemi

Chip5 

24 GHz 4-channel phased-array transceiver based on a variable phase ring oscillator and phase-locked loop architecture (2006)

Technology:
130nm CMOS

Researchers:
Harish Krishnaswamy, Hossein Hashemi

Chip4 

4-channel ultra-wideband true-time-delay-based beam-former in using a path-sharing architecture (2006)

Technology:
130nm CMOS

Researchers:
Ta-Shun Chu, Jonathan Roderick, Hossein Hashemi

Chip3 

Dual-mode oscillator (2005)

Technology:
180nm SiGe HBT BiCMOS

Researchers:
Ankush Goel, Hossein Hashemi

Chip2 

Ultra-wideband true-time-delay-based beam-former with 4 ps delay resolution and 64 ps maximum delay (2005)

Technology:
180nm SiGe HBT BiCMOS

Researchers:
Jonathan Roderick, Harish Krishnaswamy, Kenneth Newton, Hossein Hashemi

Chip1 

26 GHz coplanar-stripline-based current-sharing oscillator (2005)

Technology:
180nm CMOS

Researchers:
Harish Krishnaswamy, Hossein Hashemi