Optical phased array FMCW LiDAR with on-chip array calibration (2021) Technology: Silicon Photonics (Tower Semiconductor) + 180 nm CMOS Researchers: SungWon Chung, Makoto Nakaoi, Samer Iders, Yongwei Ni, Hossein Hashemi |
mm-wave mixer-first receiver with passive elliptic low-pass filter (2020) Technology: 65nm CMOS Researchers: Pingyue Song, Hossein Hashemi |
Low-power thermo-optic silicon modulator (2019) Technology: Silicon Photonics (Tower Jazz) Researchers: SungWon Chung, Makoto Nakai, Hossein Hashemi |
Chopper-stabilized, current feedback, neural recording amplifier (2019) Technology: 180nm CMOS Researchers: Aria Samiei, Hossein Hashemi |
A direct delta-sigma receiver with current-mode digitally-synthesized frequency-translated RF filtering (2018) Technology: 65nm CMOS Researchers: Sushil Subramanian, Hossein Hashemi |
A 13th-order CMOS reconfigurable RF BPF with adjustable transmission zeros for SAW-less SDR receivers (2018) Technology: 65nm CMOS Researchers: Pingyue Song, Hossein Hashemi |
8-element common-mode-coupled 106 GHz fundamental oscillator (2017) Technology: 130nm SiGe HBT BiCMOS Researchers: Alireza Imani, Hossein Hashemi |
1024-channel optical phased array transceiver at 1550 nm (2017) Technology: 180nm CMOS SOI Researchers: SungWon Chung, Hooman Abediasl, Hossein Hashemi |
26 GHz, 39 GHz, 37 GHz optimally-frequency-scaled differential cross-coupled LC oscillators (2017) Technology: 130nm SiGe HBT BiCMOS Researchers: Alireza Imani, Hossein Hashemi |
148 GHz differential Colpitts oscillator (2017) Technology: 130nm SiGe HBT BiCMOS Researchers: Alireza Imani, Hossein Hashemi |
106 GHz differential Colpitts oscillator (2017) Technology: 130nm SiGe HBT BiCMOS Researchers: Alireza Imani, Hossein Hashemi |
34-GHz two-transistor-stacked power amplifier with waveform engineering, Psat = 25 dBm, PAEsat = 26% (2017) Technology: 130nm SiGe HBT BiCMOS Researchers: Kunal Datta, Hossein Hashemi |
128-bit sub-picosecond optical pulse spectral processor at 1550 nm (2016) Technology: 180nm CMOS SOI Researchers: Hooman Abediasl, Hossein Hashemi |
Wideband mm-wave phase shifters based on constant-impedance tunable transmission lines (2016) Technology: 45nm CMOS SOI Researchers: Pingyue Song, Hossein Hashemi |
W-band three-transistor-stacked Class-E power amplifier with Psat = 23 dBm, PAEsat = 17% (2016) Technology: 90nm SiGe HBT BiCMOS Researchers: Kunal Datta, Hossein Hashemi |
W-band two-transistor-stacked Class-E power amplifier with Psat = 22 dBm, PAEsat = 19% (2016) Technology: 90nm SiGe HBT BiCMOS Researchers: Kunal Datta, Hossein Hashemi |
W-band Class-E power amplifier with Psat = 19 dBm, PAEsat = 16% (2016) Technology: 90nm SiGe HBT BiCMOS Researchers: Kunal Datta, Hossein Hashemi |
200 MSPS input-waveform-dependent reconfigurable analog-to-digital-converter (2016) Technology: 65nm CMOS Researchers: Sushil Subramanian, Hossein Hashemi |
Passive coupled-switched-capacitor-resonator-based, 0.5-1.1 GHz, reconfigurable bandpass filter (2016) Technology: 65nm CMOS Researchers: Run Chen, Hossein Hashemi |
8×8-channel optical phased array transceiver at 1550 nm (2015) Technology: 180nm CMOS SOI Researchers: Hooman Abediasl, Hossein Hashemi |
Event-driven implantable neural recording integrated system using level-crossing detectors (2015) Technology: 130nm CMOS Researchers: Zahra Safarian, Hossein Hashemi |
mm-Wave distributed injection locked frequency divider (2015) Technology: 130nm SiGe HBT BiCMOS Researchers: Alireza Imani, Hossein Hashemi |
Reconfigurable receiver with radio-frequency current-mode complex signal processing supporting carrier aggregation (2015) Technology: 65nm CMOS Researchers: Run Chen, Hossein Hashemi |
45 GHz digital power amplifier with dynamic load modulation, Psat = 29 dBm, PAEsat = 18.5% (2015) Technology: 130nm SiGe HBT BiCMOS Researchers: Kunal Datta, Hossein Hashemi |
Q-band Class-E 1-bit power modulator (2014) Technology: 130nm SiGe HBT BiCMOS Researchers: Kunal Datta, Hossein Hashemi |
Dual-carrier aggregation receiver with reconfigurable radio frequency front-end signal conditioning (2014) Technology: 65nm CMOS Researchers: Run Chen, Hossein Hashemi |
50 MHz-6 GHz, 2×2 MIMO, reconfigurable architecture, software-defined radio transceiver (2014) Technology: 65nm CMOS Researchers: Behnam Analui, Ankush Goel, Timothy Mercer, Sam Mandegaran, Hossein Hashemi |
Digital power amplifier with BW-3dB = 0.5-6 GHz, Psat = 25.6 dBm (2014) Technology: 65nm CMOS Researchers: Hongrui Wang, Hossein Hashemi |
Ultra-wideband impulse-radio radar transceiver (2013) Technology: 130nm CMOS Researchers: Chenliang Du, Hossein Hashemi |
800 MSPS quadrature digital direct frequency synthesizer and integrated nonlinear digital-to-analog-filter with less than 15 ns instantaneous frequency hopping time (2013) Technology: 130nm CMOS Researchers: Sushil Subramanian, Hossein Hashemi |
Q-band three-transistor-stacked Class-E power amplifier with Psat = 22 dBm and PAEpeak = 21% (2013) Technology: 130nm SiGe HBT BiCMOS Researchers: Kunal Datta, Hossein Hashemi |
Q-band two-transistor-stacked Class-E power amplifier with Psat = 23 dBm and PAEpeak = 35% (2013) Technology: 130nm SiGe HBT BiCMOS Researchers: Kunal Datta, Hossein Hashemi |
0.5-3 GHz software-defined radio receiver using discrete-time signal processing (2013) Technology: 65nm CMOS Researchers: Run Chen, Hossein Hashemi |
Q-band 2-Wilkinson-combined Class-E power amplifier with Psat = 22 dBm and PAEpeak = 23% (2012) Technology: 130nm SiGe HBT BiCMOS Researchers: Kunal Datta, Hossein Hashemi |
Q-band Class-E power amplifier with Psat = 20 dBm and PAEpeak = 31% (2012) Technology: 130nm SiGe HBT BiCMOS Researchers: Kunal Datta, Hossein Hashemi |
Film-bulk-acoustic-resonator Colpitts oscillator (2012) Technology: 130nm CMOS Researchers: Alireza Imani, Hossein Hashemi |
Passive sub-harmonic generation using LC oscillators (2012) Technology: 130nm CMOS Researchers: Zahra Safarian, Hossein Hashemi |
Wirelessly-powered passive radiofrequency transponder with dynamic energy storage and sensitivity enhancement (2011) Technology: 130nm CMOS Researchers: Zahra Safarian, Hossein Hashemi |
100 Hz-6 GHz software-defined receiver (2012) Technology: 130nm CMOS Researchers: Ankush Goel, Behnam Analui, Hossein Hashemi |
Short-range ultra-wideband impulse-radio sensor for human feature detection (2011) Technology: 130nm CMOS Researchers: Ta-Shun Chu, Jonathan Roderick, Sanghyun Chang, Timothy Mercer, Chenliang Du, Hossein Hashemi |
4-channel, 4-beam, 24-26 GHz, spatio-temporal RAKE radar transceiver (2010) Technology: 90nm CMOS Researchers: Harish Krishnaswamy, Hossein Hashemi |
Ultra-wideband, 30-40 GHz, 6-channel, true-time-delay-based beam-former with 7 simultaneous beams (2010) Technology: 130nm SiGe HBT BiCMOS Researchers: Ta-Shun Chu, Hossein Hashemi |
Low-power (<10 mW) Ka-Band (31-33.5 GHz) receiver front-end (2009) Technology: 130nm SiGe HBT BiCMOS Researchers: Firooz Aflatouni, Hossein Hashemi |
Wideband (10 Gbps) low power (1.8 mW) trans-impedance amplifier (2009) Technology: 130nm CMOS Researchers: Firooz Aflatouni, Hossein Hashemi |
Low-noise amplifier with BW-3dB = 0.5-5.5 GHz and noise figure = 1.35-1.85 dB (2009) Technology: 130nm SiGe HBT BiCMOS Researchers: Ankush Goel, Hossein Hashemi |
Power amplifier with BW-3dB = 0.75-3.75 GHz and Psat = 21 dBm (2009) Technology: 130nm CMOS Researchers: Jonathan Roderick, Hossein Hashemi |
Concurrent dual-frequency coupled oscillators (2008) Technology: 180nm SiGe HBT BiCMOS Researchers: Ankush Goel, Hossein Hashemi |
Concurrent dual-band oscillator and phase-locked loop (2008) Technology: 180nm SiGe HBT BiCMOS Researchers: Ankush Goel, Hossein Hashemi |
1.3-6 GHz triple-mode voltage-controlled oscillator using coupled inductors (2008) Technology: 130nm CMOS Researchers: Zahra Safarian, Hossein Hashemi |
Ultra-wideband, 1-18 GHz, 2×2 channel, true-time-delay-based beam-former with 7×7 simultaneous beams (2008) Technology: 130nm CMOS Researchers: Ta-Shun Chu, Hossein Hashemi |
Regenerative frequency divider with synchronous fractional outputs (2007) Technology: 130nm CMOS Researchers: Omeed Momeni, Kaushik Sengupta, Hossein Hashemi |
Differential X/Ku-Band (7-15 GHz) low noise amplifier (2007) Technology: 130nm CMOS Researchers: Masashi Yamagata, Hossein Hashemi |
Heterodyne phase locked loop with GHz acquisition range for coherent locking of semiconductor lasers (2007) Technology: 130nm CMOS Researchers: Firooz Aflatouni, Omeed Momeni, Hossein Hashemi |
4-Channel 24-27 GHz ultra-wideband phased array transmitter based on a variable phase ring oscillator and phase-locked loop architecture (2007) Technology: 130nm CMOS Researchers: Harish Krishnaswamy, Hossein Hashemi |
24 GHz 4-channel phased-array transceiver based on a variable phase ring oscillator and phase-locked loop architecture (2006) Technology: 130nm CMOS Researchers: Harish Krishnaswamy, Hossein Hashemi |
4-channel ultra-wideband true-time-delay-based beam-former in using a path-sharing architecture (2006) Technology: 130nm CMOS Researchers: Ta-Shun Chu, Jonathan Roderick, Hossein Hashemi |
Dual-mode oscillator (2005) Technology: 180nm SiGe HBT BiCMOS Researchers: Ankush Goel, Hossein Hashemi |
Ultra-wideband true-time-delay-based beam-former with 4 ps delay resolution and 64 ps maximum delay (2005) Technology: 180nm SiGe HBT BiCMOS Researchers: Jonathan Roderick, Harish Krishnaswamy, Kenneth Newton, Hossein Hashemi |
26 GHz coplanar-stripline-based current-sharing oscillator (2005) Technology: 180nm CMOS Researchers: Harish Krishnaswamy, Hossein Hashemi |