Chip Gallery

mm-wave mixer-first receiver with passive elliptic low-pass filter (2020)
Technology:
65nm CMOS
Researchers:
Pingyue Song, Hossein Hashemi
Low-power thermo-optic silicon modulator (2019)
Technology:
Silicon Photonics (Tower Jazz)
Researchers:
SungWon Chung, Makoto Nakai, Hossein Hashemi
Chopper-stabilized, current feedback, neural recording amplifier (2019)
Technology:
180nm CMOS
Researchers:
Aria Samiei, Hossein Hashemi
Geometric loss reduction in tight bent waveguides for silicon photonics (2018)
Technology:
Silicon Photonics by University of Washington Nanofabrication Facility
Researchers:
Makoto Nakai, Tsuyoshi Nomura, SungWon Chung, Hossein Hashemi
A direct delta-sigma receiver with current-mode digitally-synthesized frequency-translated RF filtering (2018)
Technology:
65nm CMOS
Researchers:
Sushil Subramanian, Hossein Hashemi
A 13th-order CMOS reconfigurable RF BPF with adjustable transmission zeros for SAW-less SDR receivers (2018)
Technology:
65nm CMOS
Researchers:
Pingyue Song, Hossein Hashemi
8-element common-mode-coupled 106 GHz fundamental oscillator (2017)
Technology:
130nm SiGe HBT BiCMOS
Researchers:
Alireza Imani, Hossein Hashemi
Chip52 1024-channel optical phased array transceiver at 1550 nm (2017)
Technology:
180nm CMOS SOI
Researchers:
SungWon Chung, Hooman Abediasl, Hossein Hashemi
Chip51 26 GHz, 39 GHz, 37 GHz optimally-frequency-scaled differential cross-coupled LC oscillators (2017)
Technology:
130nm SiGe HBT BiCMOS
Researchers:
Alireza Imani, Hossein Hashemi
Chip50 148 GHz differential Colpitts oscillator (2017)
Technology:
130nm SiGe HBT BiCMOS
Researchers:
Alireza Imani, Hossein Hashemi
Chip49 106 GHz differential Colpitts oscillator (2017)
Technology:
130nm SiGe HBT BiCMOS
Researchers:
Alireza Imani, Hossein Hashemi
Chip48 34-GHz two-transistor-stacked power amplifier with waveform engineering, Psat = 25 dBm, PAEsat = 26% (2017)
Technology:
130nm SiGe HBT BiCMOS
Researchers:
Kunal Datta, Hossein Hashemi
Chip47 128-bit sub-picosecond optical pulse spectral processor at 1550 nm (2016)
Technology:
180nm CMOS SOI
Researchers:
Hooman Abediasl, Hossein Hashemi
Chip46 Wideband mm-wave phase shifters based on constant-impedance tunable transmission lines (2016)
Technology:
45nm CMOS SOI
Researchers:
Pingyue Song, Hossein Hashemi
Chip45 W-band three-transistor-stacked Class-E power amplifier with Psat = 23 dBm, PAEsat = 17% (2016)
Technology:
90nm SiGe HBT BiCMOS
Researchers:
Kunal Datta, Hossein Hashemi
Chip44 W-band two-transistor-stacked Class-E power amplifier with Psat = 22 dBm, PAEsat = 19% (2016)
Technology:
90nm SiGe HBT BiCMOS
Researchers:
Kunal Datta, Hossein Hashemi
Chip43 W-band Class-E power amplifier with Psat = 19 dBm, PAEsat = 16% (2016)
Technology:
90nm SiGe HBT BiCMOS
Researchers:
Kunal Datta, Hossein Hashemi
Chip42 200 MSPS input-waveform-dependent reconfigurable analog-to-digital-converter (2016)
Technology:
65nm CMOS
Researchers:
Sushil Subramanian, Hossein Hashemi
Chip41 Passive coupled-switched-capacitor-resonator-based, 0.5-1.1 GHz, reconfigurable bandpass filter (2016)
Technology:
65nm CMOS
Researchers:
Run Chen, Hossein Hashemi
Chip40 8×8-channel optical phased array transceiver at 1550 nm (2015)
Technology:
180nm CMOS SOI
Researchers:
Hooman Abediasl, Hossein Hashemi
Chip39 Event-driven implantable neural recording integrated system using level-crossing detectors (2015)
Technology:
130nm CMOS
Researchers:
Zahra Safarian, Hossein Hashemi
Chip38 mm-Wave distributed injection locked frequency divider (2015)
Technology:
130nm SiGe HBT BiCMOS
Researchers:
Alireza Imani, Hossein Hashemi
Chip37 Reconfigurable receiver with radio-frequency current-mode complex signal processing supporting carrier aggregation (2015)
Technology:
65nm CMOS
Researchers:
Run Chen, Hossein Hashemi
Chip36 45 GHz digital power amplifier with dynamic load modulation, Psat = 29 dBm, PAEsat = 18.5% (2015)
Technology:
130nm SiGe HBT BiCMOS
Researchers:
Kunal Datta, Hossein Hashemi
Chip35 Q-band Class-E 1-bit power modulator (2014)
Technology:
130nm SiGe HBT BiCMOS
Researchers:
Kunal Datta, Hossein Hashemi
Chip34 Dual-carrier aggregation receiver with reconfigurable radio frequency front-end signal conditioning (2014)
Technology:
65nm CMOS
Researchers:
Run Chen, Hossein Hashemi
Chip33 50 MHz-6 GHz, 2×2 MIMO, reconfigurable architecture, software-defined radio transceiver (2014)
Technology:
65nm CMOS
Researchers:
Behnam Analui, Ankush Goel, Timothy Mercer, Sam Mandegaran, Hossein Hashemi
Chip32 Digital power amplifier with BW-3dB = 0.5-6 GHz, Psat = 25.6 dBm (2014)
Technology:
65nm CMOS
Researchers:
Hongrui Wang, Hossein Hashemi
Chip31 Ultra-wideband impulse-radio radar transceiver (2013)
Technology:
130nm CMOS
Researchers:
Chenliang Du, Hossein Hashemi
Chip30 800 MSPS quadrature digital direct frequency synthesizer and integrated nonlinear digital-to-analog-filter with less than 15 ns instantaneous frequency hopping time (2013)
Technology:
130nm CMOS
Researchers:
Sushil Subramanian, Hossein Hashemi
Chip29 Q-band three-transistor-stacked Class-E power amplifier with Psat = 22 dBm and PAEpeak = 21% (2013)
Technology:
130nm SiGe HBT BiCMOS
Researchers:
Kunal Datta, Hossein Hashemi
Chip28 Q-band two-transistor-stacked Class-E power amplifier with Psat = 23 dBm and PAEpeak = 35% (2013)
Technology:
130nm SiGe HBT BiCMOS
Researchers:
Kunal Datta, Hossein Hashemi
Chip27 0.5-3 GHz software-defined radio receiver using discrete-time signal processing (2013)
Technology:
65nm CMOS
Researchers:
Run Chen, Hossein Hashemi
Chip26 Q-band 2-Wilkinson-combined Class-E power amplifier with Psat = 22 dBm and PAEpeak = 23% (2012)
Technology:
130nm SiGe HBT BiCMOS
Researchers:
Kunal Datta, Hossein Hashemi
Chip25 Q-band Class-E power amplifier with Psat = 20 dBm and PAEpeak = 31% (2012)
Technology:
130nm SiGe HBT BiCMOS
Researchers:
Kunal Datta, Hossein Hashemi
Chip24 Film-bulk-acoustic-resonator Colpitts oscillator (2012)
Technology:
130nm CMOS
Researchers:
Alireza Imani, Hossein Hashemi
Chip23 Passive sub-harmonic generation using LC oscillators (2012)
Technology:
130nm CMOS
Researchers:
Zahra Safarian, Hossein Hashemi
Chip22 Wirelessly-powered passive radiofrequency transponder with dynamic energy storage and sensitivity enhancement (2011)
Technology:
130nm CMOS
Researchers:
Zahra Safarian, Hossein Hashemi
Chip21 100 Hz-6 GHz software-defined receiver (2012)
Technology:
130nm CMOS
Researchers:
Ankush Goel, Behnam Analui, Hossein Hashemi
Chip20 Short-range ultra-wideband impulse-radio sensor for human feature detection (2011)
Technology:
130nm CMOS
Researchers:
Ta-Shun Chu, Jonathan Roderick, Sanghyun Chang, Timothy Mercer, Chenliang Du, Hossein Hashemi
Chip19 4-channel, 4-beam, 24-26 GHz, spatio-temporal RAKE radar transceiver (2010)
Technology:
90nm CMOS
Researchers:
Harish Krishnaswamy, Hossein Hashemi
Chip18 Ultra-wideband, 30-40 GHz, 6-channel, true-time-delay-based beam-former with 7 simultaneous beams (2010)
Technology:
130nm SiGe HBT BiCMOS
Researchers:
Ta-Shun Chu, Hossein Hashemi
Chip17 Low-power (<10 mW) Ka-Band (31-33.5 GHz) receiver front-end (2009)
Technology:
130nm SiGe HBT BiCMOS
Researchers:
Firooz Aflatouni, Hossein Hashemi
Chip16 Wideband (10 Gbps) low power (1.8 mW) trans-impedance amplifier (2009)
Technology:
130nm CMOS
Researchers:
Firooz Aflatouni, Hossein Hashemi
Chip15 Low-noise amplifier with BW-3dB = 0.5-5.5 GHz and noise figure = 1.35-1.85 dB (2009)
Technology:
130nm SiGe HBT BiCMOS
Researchers:
Ankush Goel, Hossein Hashemi
Chip14 Power amplifier with BW-3dB = 0.75-3.75 GHz and Psat = 21 dBm (2009)
Technology:
130nm CMOS
Researchers:
Jonathan Roderick, Hossein Hashemi
Chip13 Concurrent dual-frequency coupled oscillators (2008)
Technology:
180nm SiGe HBT BiCMOS
Researchers:
Ankush Goel, Hossein Hashemi
Chip12 Concurrent dual-band oscillator and phase-locked loop (2008)
Technology:
180nm SiGe HBT BiCMOS
Researchers:
Ankush Goel, Hossein Hashemi
Chip11 1.3-6 GHz triple-mode voltage-controlled oscillator using coupled inductors (2008)
Technology:
130nm CMOS
Researchers:
Zahra Safarian, Hossein Hashemi
Chip10 Ultra-wideband, 1-18 GHz, 2×2 channel, true-time-delay-based beam-former with 7×7 simultaneous beams (2008)
Technology:
130nm CMOS
Researchers:
Ta-Shun Chu, Hossein Hashemi
Chip9 Regenerative frequency divider with synchronous fractional outputs (2007)
Technology:
130nm CMOS
Researchers:
Omeed Momeni, Kaushik Sengupta, Hossein Hashemi
Chip8 Differential X/Ku-Band (7-15 GHz) low noise amplifier (2007)
Technology:
130nm CMOS
Researchers:
Masashi Yamagata, Hossein Hashemi
Chip7 Heterodyne phase locked loop with GHz acquisition range for coherent locking of semiconductor lasers (2007)
Technology:
130nm CMOS
Researchers:
Firooz Aflatouni, Omeed Momeni, Hossein Hashemi
Chip6 4-Channel 24-27 GHz ultra-wideband phased array transmitter based on a variable phase ring oscillator and phase-locked loop architecture (2007)
Technology:
130nm CMOS
Researchers:
Harish Krishnaswamy, Hossein Hashemi
Chip5 24 GHz 4-channel phased-array transceiver based on a variable phase ring oscillator and phase-locked loop architecture (2006)
Technology:
130nm CMOS
Researchers:
Harish Krishnaswamy, Hossein Hashemi
Chip4 4-channel ultra-wideband true-time-delay-based beam-former in using a path-sharing architecture (2006)
Technology:
130nm CMOS
Researchers:
Ta-Shun Chu, Jonathan Roderick, Hossein Hashemi
Chip3 Dual-mode oscillator (2005)
Technology:
180nm SiGe HBT BiCMOS
Researchers:
Ankush Goel, Hossein Hashemi
Chip2 Ultra-wideband true-time-delay-based beam-former with 4 ps delay resolution and 64 ps maximum delay (2005)
Technology:
180nm SiGe HBT BiCMOS
Researchers:
Jonathan Roderick, Harish Krishnaswamy, Kenneth Newton, Hossein Hashemi
Chip1 26 GHz coplanar-stripline-based current-sharing oscillator (2005)
Technology:
180nm CMOS
Researchers:
Harish Krishnaswamy, Hossein Hashemi